0.8um 1P2MCMOS process platform。0.8um gate length，single poly, double metal，application for LED driver，Core/IO voltage：5.0V,。FMIC has the elaborate design rule document.
Process features
? Single poly, double metal, twin well.
? Core/IO voltage：5.0V, Vds>5V, Vgs>5V.
? Substrate silicon material is N-type <100>, 4-7ohm-cm.
? 11 masks and 12 photo layers.
? N-Type mask Rom code for option.
? Standard LOCOS process for isolation.
? 200A gate oxide, poly for gate electrode.
? NLDD, PLDD and spacer structure.
? Ti/TiN/AlSiCu/TiN stack layer for interconnection.
? Oxide and nitride stack layer for passivation.
? IMD planarization process.
Applications
? DC-DC Converter
? Power management product
? Battery protection IC
? LED Driver